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| Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD1396 DESCRIPTION *With TO-3PN package *Built-in damper diode *High voltage ,high reliability *High speed switching APPLICATIONS *For horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol Absolute maximum ratings (Ta=25) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25 CONDITIONS Open emitter Open base Open collector VALUE 1500 800 7 2.5 10 80 150 -55~150 UNIT V V V A A W Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD1396 TYP. MAX UNIT V(BR)CEO Collector- emitter breakdown voltage IC=100mA; RBE= 800 V V(BR)CBO Collector-base breakdown voltage IC=5mA; IE=0 1500 V V(BR)EBO Emitter-base breakdown voltage IE=200mA; IC=0 7 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.6A 8.0 V VBEsat Base-emitter saturation voltage IC=2A; IB=0.6A 1.5 V A ICBO Collector cut-off current VCB=800V; IE=0 10 IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.5A ; VCE=10V IC=2A;IB1=0.6A; IB2=-1.2A, VCC=200V; RL=100 IEC=2.5A 3 MHz s tf Fall time 0.7 VF Diode forward voltage 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD1396 Fig.2 outline dimensions (unindicated tolerance:0.10 mm) 3 |
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